In the field of information storage devices we focus on new Resistive Random Access Memories (ReRAMs) and functionalizing new logic multiresistive address elements beyond classic binary digit transistors used in computing. Understanding the role of mixed anionic oxygen and electronic charge and mass transport for solid state oxides under high electric field strength is studied, implicating suitable materials and designing their structures to manipulate memristor device kinetics and thermodynamics. To introduce new classes of ReRAMs we study mechanical strain-oxygen ionic transport in binary oxide multilayer constituents and systematically dope oxides to tune the electronic band gaps. Oxygen ionic defect models in polycrystalline and epitaxial single film oxides are established to gain new fundamental insights. First oxygen anionic-electronic stacked 3D memristor bits are designed, fabricated and electrochemically studied in their single bit and net-memristive serial and anti-serial response. Multi-bit responses for potential multi-resistive bit per node addressing are investigated as alternative to classic binary (2-resistive bit) transistor structures.
Formally: Dr. Sebastian Schweiger, Dr. Roman Korobko, Dr. Markus Kubicek, Dr. Felix Messerschmitt, Dr. Sören Boyn, Dr. Andreas Nenning, Dr. Rafael Schmitt